Wide-Bandgap Semis

November 2024

Explore the Benefits of GaN-Based Power Electronics in the New eBook from Mouser Electronics, Analog Devices, and Bourns

Mouser Electronics, Inc., the New Product Introduction (NPI) leader™ empowering innovation, today announces a new eBook in collaboration with Analog Devices, Inc. (ADI) and Bourns exploring the challenges and benefits of Gallium Nitride (GaN) technology in the pursuit of efficiency, pe

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Date:

11/27/2024

ROHM and Valeo leverage their combined strengths and intensive exchange to achieve high- performance powertrains. Nicolas Gelez, Valeo Power Inverter Platform Director at Valeo (right), Christophe Chevalier, Power Purchasing Vice President at Valeo (center), and Wolfram Harnack...

ROHM Semiconductor and Valeo Co-Develop the Next Generation of Power Electronics

ROHM Semiconductor and Valeo, a leading automotive technology company, today announced they are collaborating to propose and optimize the next generation of power modules for electric motor inverters using their combined expertise in power electronics management. As a first step, ROHM will provide its 2-in-1 Si

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Date:

11/27/2024

David Carroll, Senior Vice President of Worldwide Sales at Navitas

Navitas and Richardson Electronics, Ltd. Expand Technology Partnership to EMEA for Next-Gen Silicon Carbide Power Devices

Richardson Electronics, Ltd. and Navitas Semiconductor announced today an expanded distribution partnership for next-gen silicon carbide (SiC) power semiconductors for Europe, the Middle East, and Africa (EMEA). Navitas is the only pure-play, next-generation power-semiconductor company and industry

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Date:

11/12/2024

First 1700 V GaN Switcher IC Delivers 90% Efficiency from 1000 VDC Bus

The industry’s first 1700 V gallium nitride (GaN) switch is now available in a new member of the InnoMux-2 IC family, substantially expanding the range of applications for GaN technology. InnoMux-2 devices enable single-stage flyback power supply designs with up to three independently regulated outputs. The 1700 V ra

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Date:

11/11/2024

Target applications for the new CoolGaN™ Transistors 650 V G5 range from consumer and industrial switched-mode power supply to renewable energy and motor drives in home appliances.

Infineon Launches New Generation of GaN Power Discretes with Superior Efficiency and Power Density

Infineon Technologies AG announced the launch of a new family of high-voltage discretes, the CoolGaN™ Transistors 650 V G5, further strengthening its Gallium Nitride (GaN) portfolio. Target applications for this new product family range from consumer and industrial switched-mode power supply (SMPS) such as

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Date:

11/04/2024