Wide-Bandgap Semis

October 2024

Innoscience Expands its 100V Automotive-Grade Portfolio for the Automotive LiDAR Market

Innoscience Technology, the company founded to create a global energy ecosystem based on high-performance, price-competitive, gallium-nitride-on-silicon (GaN-on-Si) power solutions, has expanded its portfolio with two 100V automotive-grade GaN devices. The company’s INN100W135A-Q (RDS(on),max = 13

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Date:

10/30/2024

The ultra-thin silicon wafers of 20 micrometers by Infineon are only a quarter as thick as a human hair and half as thick as current state-of-the-art wafers of 40-60 micrometers.

Infineon Unveils the World's Thinnest Silicon Power Wafer, Pushing Technical Boundaries and Improving Energy Efficiency

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) has unveiled the next milestone in semiconductor manufacturing tec

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Date:

10/29/2024

Infineon’s CoolSiC™ Schottky diode 2000 V G5 is the first discrete silicon carbide diode on the market with a breakdown voltage of 2000 V.

CoolSiC Schottky Diode 2000 V Enables Higher Efficiency and Design Simplification in DC Link Systems up to 1500 VDC

Many industrial applications today are transitioning to higher power levels with minimized power losses, which can be achieved through increased DC link voltage. Infineon Technologies AG addresses this challenge by introducing the CoolSiC™ Schottky diode 2000 V G5, the first discrete silicon carbide diode on

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Date:

10/23/2024

HybridPACK™ Drive G2 Fusion: Infineon combines silicon and silicon carbide in a cutting-edge power module for e-mobility

HybridPACK Drive G2 Fusion: Infineon Combines Silicon and Silicon Carbide in a Cutting-Edge Power Module for E-mobility

Affordability combined with high performance and efficiency is the key to making electric mobility accessible to a broader market. That's why Infineon Technologies AG is introducing the HybridPACK™ Drive G2 Fusion, establishing a new power module standard for traction inverters in the e-mobility sector. The

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Date:

10/15/2024

Navitas Delivers More Power for AI & EV with Extended GaNSafe Portfolio

Navitas Semiconductor, the only pure-play, next-generation power semiconductor company and industry leader in gallium nitride (GaN) power ICs and silicon carbide (SiC) technology, has announced that its high-power GaNSafe family is now available in a TOLT (Transistor Outline Leaded Top-side cooling) package. The GaNSafe fam

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Date:

10/09/2024

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Figure 1: A modern approach to high efficiency AC/DC conversion

Silicon Carbide Power Switches in Data Center Power Supplies

Mike Zhu and Aparna Kumar, Qorvo

It is a credit to the community of designers and engineers working to increase efficiency, that according to the IEA, data center energy consumption only increased 20-70% between 2015 and 2022, while workload increased 340%. However, limits are approaching for power density in data centers with cabinets slated to

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Date:

10/01/2024

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Figure 1: Typical thermal stack of a baseplate-less module, and RthJA distribution

A Winning Combination of AlN Ceramic Substrate and SiC MOSFETs

Ainhoa Puyadena Mier, Paul Salmen, Torsten Methfessel, Meng-Meng Zhou, Infineon Technologies

Wide bandgap silicon carbide (SiC) has emerged as a crucial semiconductor, particularly in applications that demand high power density and efficiency, such as EV charging, solar inverters, or energy storage systems. Its key advantages over traditional silicon devices include higher breakthrough electric field, la

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Date:

10/01/2024