Wide-Bandgap Semis

    May 2024
    Nexperia's Premier SiC MOSFETs now Come in the Increasingly Popular D2PAK-7

    Nexperia's Premier SiC MOSFETs now Come in the Increasingly Popular D2PAK-7

    ­Nexperia announced that it is now offering its industry leading 1200 V silicon carbide (SiC) MOSFETs in D2PAK-7 surface mount device (SMD) packaging, with a choice of 30, 40, 60, and 80 mΩ RDSon values. This announcement follows on from Nexperia’s late-2023 release of two discrete SiC MOSF
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    Date:
    05/21/2024
    Power Modules: One Shortcut to EMI Compliance

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    Figure 1: Notional spectra for a square, trapezoidal, and triangular signal

    ­Electronic devices that are in proximity or share common conductors are susceptible to electromagnetic interference (EMI) that can disrupt their operation. Minimizing emissions is necessary to ensure that electrical systems do not interfere with each other’s normal operation when placed in the same environment. Po
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    Date:
    05/01/2024
    Archive

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

    Wide Bandgap Devices Deliver on Their Promise

    Jan 26,2026
    Kevin Parmenter, Pins Out Engineering, for TSC America, Inc.

    Power Systems Design

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