Wide-Bandgap Semis
June 2022
Navitas Powers Xiaomi's First In-Box GaN 100 W Laptop Fast Charger
Navitas Semiconductor has announced that the latest Xiaomi Redmi laptop family 100 W fast chargers are driven by next-generation GaNFast power ICs with GaNSense technology.
Consumer electronics giant Xiaomi has adopted GaNFast technology to develop an ultra-compact, high-power-density charger now shipping with a
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Date:
06/30/2022
Rad Hard GaN Transistors Offer Highest Density and Efficiency on the Market
EPC announces the introduction of the EPC7004 radiation-hardened GaN FET. The EPC7004 is a 100 V, 7 mΩ, 160 APulsed, rad-hard GaN FET in a small 6.56 mm2 footprint. The EPC7004 has a total dose radiation rating greater than 1 Mrad and SEE immunity for LET of 85 MeV/(mg/cm2). The EPC7004, along with the
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Date:
06/29/2022
Click image to enlarge
Figure 1a: Discrete GaN FET on PCB and ‘hidden’ parasitic resonant network with switching current paths
GaNFastPower ICs have enabled 10x higher switching frequencies versus Silicon and achieved unprecedented power densities (1.3 W/cc) due to their integrated and regulated gate drive technology. Discrete GaN FETs continue to have slow adoption due to ruggedness & reliability concerns, plus difficulties with des
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Date:
06/01/2022
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