Wide-Bandgap Semis

January 2022
PSDcast – World's First GaN IC Design Center Dedicated to EVs

Stephen Oliver, the VP of Corporate Marketing & Investor Relations at Navitas

Navitas Semiconductor has opened the world’s first GaN IC design center dedicated to EVs. This is a monumental bit of news with ripples that could spread across the globe, and we’re eager to learn more.
Date:
01/27/2022
Power IC Delivers iQOO's Fastest, Smallest 120W Charger in new Market Category
Navitas officially announced that its next-generation GaNFast power IC drives the 120W ultra-fast charger supplied ‘in-box’ with vivo’s iQOO-brand flagship iQOO 9 Pro mobile phone. The 9 Pro’s powerful 4,700 mAhr battery charges from 0-100% in only 19 lightning-fast minutes, and at only 60
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Date:
01/19/2022
650V SiC MOSFET From ROHM in Stock at TTI
TTI has stock for immediate shipment of the SCT3060AL 650V Silicon Carbide (SiC) MOSFET from ROHM Semiconductor. With over 100 SiC part numbers, ROHM is a world leader in SiC. The SCT3060AL is an N-Channel MOSFET with a continuous drain current rating of 39A and power dissipation of 165W. It is packaged in the TO
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Date:
01/12/2022
Navitas Opens World's First GaN IC Design Center Dedicated to EVs
Navitas Semiconductor announced the opening of a new electric vehicle (EV) Design Center, further expanding into higher-power GaN markets. GaN-based on-board chargers (OBCs) are estimated to charge 3x faster with up to 70% energy savings compared to legacy silicon solutions. GaN OBCs, DC-DC converters and tr
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Date:
01/04/2022
Silicon Carbide Technology and Digital Gate Driving Pave Way for Electrification of Heavy Transport Vehicles
Among the most promising technologies in the mission to decarbonize emissions-intensive transportation vehicles are SiC-based power-management solutions supported by configurable digital gate driver technology. The high power and voltage requirements of electric vehicles (EVs) of all types, including electric
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Date:
01/01/2022