Wide-Bandgap Semis
Current
EPC Expands the Offering of 100 V Integrated GaN Power Stages Optimized for Motor Drives with Improved Control and Protection
Efficient Power Conversion (EPC), a leader in enhancement-mode gallium nitride (eGaN®) power devices, has introduced a new generation of 100 V integrated GaN power-stage ICs - EPC23108, EPC23109, EPC23110 and EPC23111 - targeting high-performance motion and power systems such as
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Date:
04/03/2026
Gallium oxide - the promising ultra-wide band gap material
Copyright: VON ARDENNE
Gallium oxide (Ga₂O₃) — especially in its most stable β phase — is attracting strong interest as an ultra-wide bandgap (UWBG) semiconductor with the potential to redefine power electronics beyond the limits of silicon carbide (SiC) and gallium nitride (GaN).
With a bandgap energy of about 4.7–4.9
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Date:
04/03/2026
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