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    Infineon Marks Innovation Milestone with World's First 300-Millimeter Power Silicon Carbide Wafer

    Infineon now masters all three materials in 300 mm: silicon, silicon carbide and gallium nitride

    Infineon Marks Innovation Milestone with World's First 300-Millimeter Power Silicon Carbide Wafer
    ­Infineon Technologies AG has successfully processed 300-millimeter silicon carbide wafers into functional power devices at its fab in Villach, Austria. Infineon is the first company to pioneer this innovation milestone in a full-scale semiconductor fab environment. It was realized by utilizing existing silicon (S
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    Date:
    11/09/2026
    Archive

    SemiQ Gen4 1200 V and 750 V SiC MOSFETs Cut On-Resistance By 21% and Switching Energy By 11%

    Oct 27,2026

    Low-Loss Inductors for High-Efficiency Power Converters

    Sep 29,2026
    Annika Frankemölle; Editor: Gerhard Stelzer, Würth Elektronik

    NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

    Aug 6,2026

    Silicon Carbide Semiconductors: Gaining Widespread Adoption

    Jul 30,2026
    Jens Baringhaus, Chief Expert for Wideband Gap Technology and responsible for Bosch's SiC technology roadmap

     

     

     

     

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