Wide-Bandgap Semis
September 2026
Andreas Weisl, Executive Vice President and Chief Sales Officer of Industrial & Infrastructure at Infineon
Infineon Technologies AG will deliver silicon carbide (SiC) power devices to Eaton, an intelligent power management company, for use in its medium-voltage solid-state transformer (MVSST) 2.0 platform designed for deployment across APAC. The collaboration helps increase the efficiency and reliability of the po
. . . Learn More
Date:
09/29/2026
Figure 1: Set-up of the DC/DC converter for determining losses
As switching frequencies climb into the megahertz range and power densities continue to rise, power inductor losses have become a decisive factor in overall converter efficiency. Würth Elektronik's low-loss inductor technologies—from advanced core materials to flat wire windings—help engineers push high-effic
. . . Learn More
Date:
09/29/2026
Click image to enlarge
Figure 1: Simplified comparison of a traditional two-level SiC power stage and a three-level multi-level GaN topology
The shift to 800 V electric vehicle (EV) power architectures is about more than just voltage rating. Moving to multi-level gallium nitride (GaN) topologies can improve system cost, thermal performance and power density compared with traditional high-voltage silicon carbide (SiC) approaches. By dividing voltage st
. . . Learn More
Date:
09/01/2026
Archive
