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    NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs

    Dr. Adam Morgan, Co-Founder and CEO of NoMIS Power

    NoMIS Power Demonstrates 6.5 kV SiC MOSFET, Advancing a High-Voltage Roadmap to 10 kV and 20 kV SiC IGBTs
    ­NoMIS Power Corporation, a leader in advanced Silicon Carbide (SiC) power semiconductor technology, today announced a major high-voltage milestone: the successful demonstration of its first 6.5 kV large-die SiC MOSFET. The device was measured at over 8 kV blocking, 90 mΩ on-resistance, and 55 A drain current. Th
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    Date:
    08/06/2026
    Archive

    Silicon Carbide Semiconductors: Gaining Widespread Adoption

    Jul 30,2026
    Jens Baringhaus, Chief Expert for Wideband Gap Technology and responsible for Bosch's SiC technology roadmap

    NoMIS Power Joins ARPA-E DC-GRIDS Consortium, Supplying 3.3 kV SiC MOSFETs for High-Voltage HVDC Submodules

    May 15,2026

    Bosch introduces third generation of SiC chips

    Apr 22,2026
    Ally Winning, European Editor, PSD

    Transformer Design Comparisons for Mitigating EMI in Gate Driver Circuits

    Mar 29,2026
    Matthew Russell, Master’s student at University College Cork, and a student engineer at Bourns Electronics Ireland

     

     

     

     

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