Wide-Bandgap Semis

Current

Jason Lomberg, North American Editor, PSD

The Ubiquity of Wide Band-Gap Technology

Jason Lomberg, North American Editor, PSD

Welcome to the February issue! We’re a mere month away from the Applied Power Electronics Conference (APEC), and I’ve started hearing hints and rumblings of the premier event for power design professionals. A large event that attracts over 300 exhibitors and more than 6,000 attendees and which “foc

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Date:

02/01/2026

Ally Winning, European Editor, PSD

GaN Breaks Through Beyond its Traditional Limits

Ally Winning, European Editor, PSD

Welcome to the February edition of Power Systems Design. The Special Report this month is on wide bandgap materials. GaN and SiC have revolutionized the industry in terms of efficiency and power density for a wide number of power applications. However, those benefits trade off with additional complexity, and as

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Date:

02/01/2026

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Figure 1: Stability versus Current

- Low current condition (Vds=200V)

- High current condition (Vds=200V)

Balancing Speed and Stability in Parallel-Connected SiC MOSFETs Designs

Lizhong Zhou, Manager, Business Development, Toshiba

Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments. Parallel-connected SiC MOSFE

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Date:

02/01/2026

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Figure 1: The LTC7891 step-down (buck) converter schematic

Low Voltage GaN Converter Gate Drive and Measurement

Kurk Mathews, Senior Applications Manager, and Luis Onofre Lazaro, Applications Engineer, Analog Devices

Gallium nitride field-effect transistors (GaN FETs) offer faster switching speeds, smaller packages, and lower power losses than silicon FETs. These features allow power converters to run at higher frequencies, reducing overall solution size while maintaining high efficiency. While the basic DC-to-DC converter de

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Date:

02/01/2026