Wearables & Nanopower

March 2022

Ally Winning

Estimating the useable lifetime of electronic components has always been an important task for design engineers, especially for critical applications where the design might see service for several decades. Although manufacturers do specify a lifetime on datasheets, that is under ideal conditions at normal operati

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Date:

03/30/2022

Electrothermal models cover MOSFET operating temperature range

Semiconductor manufacturers commonly provide simulation models for their MOSFETs, but these usually only include a limited number of device parameters which have been modelled at typical operating temperatures. Nexperia’s new advanced models capture the thermal interdependency of the complete set of device pa

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Date:

03/28/2022

60V, 70dB PSRR LDOs Deliver Industry-Leading Quiescent Current

The DIODES AP7387 devices are used in applications such as cordless vacuum cleaners, smoke detectors, power tools, and various other household appliances. The devices have an input voltage range spanning from 5V to 60V, which gives them the flexibility to be connected to 5V, 9V, 12V, 24V, and 48V rai

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Date:

03/28/2022

ROHM starts production of 150V GaN HEMTs

The components will ideally be applied in power supply circuits for industrial equipment such as base stations and data centers along with IoT communication devices. In recent years – due to the rising demand for server systems in response to the growing number of IoT devices – improving powe

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Date:

03/28/2022

High-Efficiency Quasi-Resonant PFC IC with 750 V GaN Switch

Power Integrations announced the HiperPFS™-5 family of power-factor-correction (PFC) ICs with an integrated 750 V PowiGaN gallium-nitride switch. With efficiency of up to 98.3 percent, the new ICs deliver up to 240 W without a heat sink and can achieve a power factor of better than 0.98. HiperPFS-5 ICs are i

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Date:

03/28/2022

Navitas Announces World’s First 20-Year Warranty for GaN ICs

Navitas Semiconductor has announced a breakthrough 20-year limited warranty for its GaNFast technology – 10x longer than typical silicon, SiC or discrete GaN power semiconductors – and a critical accelerator for GaN’s adoption in data center, solar and EV markets. GaN is a next-generation semiconductor te

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Date:

03/28/2022

Infineon releases new EiceDRIVER 2EDN product family

Aiming at space-limited designs, the next-generation devices complement the existing 2EDN driver ICs by providing higher system-level efficiencies, excellent power density, and consistent system robustness with fewer external components. Building upon this expansion, the 2EDN family is now able to drive the power s

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Date:

03/28/2022

Infineon is launching EDT2 IGBTs in a TO247PLUS package

The devices are optimized for automotive discrete traction inverters and expand Infineon's portfolio of discrete high-voltage devices for automotive applications. Due to their high quality, the IGBTs meet and exceed the industry standard AECQ101 for automotive components. As a result, the devices can significantly increa

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Date:

03/28/2022