Technical Features

April 2020

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Figure 1: Schematic of a high-voltage PowiGaN cascode switch

1250 V/1700 V GaN HEMTs for NVIDIA 800 VDC Architecture

Kamal Varadarajan & Chris Lee, Power Integrations

GaN-based power semiconductors are ideal for high-efficiency power converters thanks to their superior material properties. However, very few manufacturers offer GaN HEMTs rated above 650 V. The main challenge is that GaN devices built on silicon substrates require very thick buffer layers, which adds significant pr

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Date:

01/31/2026

April's Most-Read Articles

These are the technical features that grabbed the most eyeballs throughout the month of April, based on figures from Google Analytics. So while you're hunkered down in the home office (and possibly dealing with cabin fever), reacquaint yourselves with some of PSD's best content. GaN and 48 V - Where are We and Where are We Going? Author: Alex Lidow Ph.D., CEO and Co-founder, Efficient Power C

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Date:

04/30/2020