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Figure 1: Fully assembled IMR and the exploded view
Figure 1: Si MOSFET-based architecture for providing AC power to the CPU or GPU
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Figure 1 - Complete 3D CAD tool suites offer capability to create production level drawings
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Figure 1: A typical ‘power tree’ for a Xilinx Zynq 7 device
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Figure 1. Dispense Line Consistency (um)
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Figure 1. The above graph shows the strong growth opportunity at hand as emission standards drive a significant shift to battery electric vehicles. (Source: Yole and Cree estimates)
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Figure 1. A baby-faced service robot on the CES 2020 show floor. (Picture courtesy of Reno Rossetti)
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Figure 1. Twisted pairs in an Ethernet cable powered by Power over Ethernet
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Figure 1: LAPP’s Ölflex Classic control cables include the flame-retardant 130H version, which is suitable for facilities that face high fire risks.
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Figure 1: Delta configuration
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Figure 1: HRR operation is similar to fixed ratio at lower Vin, but limits Vout at higher values of Vin
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Figure 1. One possible FPGA power tree: a high voltage input supply (for example, 12 V, 24 V, or 48 V) is stepped down to an intermediate voltage bus feeding the POL regulators that power the FPGA
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Figure 1. Sensors must offer versatility for broad applicability
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Figure 1a. Example voltage and current discharge curves for 10 kW discharge from one module with 56 V float voltage
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Figure 1. Rated to IP67, the KSC3 series sealed tact switch offers positive adaptable tactile feeling
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Figure 1. A complete ±12 V/50 mA isolated flyback converter for a wide input range, 30 V to 400 V.
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Table 1: Advanced Controllers vs. Analog-Based and Digital Control Solutions
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Figure 1. Simplified schematic of the Ignition IGBT test circuit and the resulting IGBT gate voltage, collector current, and dissipated power. P1 is the ON-state power loss and P2 is the discharging cycle power loss
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Figure 1: RDS(on) comparison for a CoolSiC device using various gate drive voltages at different temperatures
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Figure 1. A large driver source current is needed to charge gate capacitances quickly. Source: ON Semiconductor TND6237/D
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Figure 1: Weibull plots of gate-to-source failures of EPC2212. Note that very few failures occur even at 8 VGS , yet the device has a maximum VGS rating of 6 V. The data on the left is at 25oC and the data on the right is at 120oC
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Figure 1: GaN optimized for fast switching
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Figure 1: Two-chip normally-off high voltage GaN FET
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Figure 1: Examples of grid-tied converters
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Figure 1. The half-bridge circuit is widely used to convert electrical energy efficiently in modern designs
