Lizhong Zhou, Manager, Business Development, Toshiba
Engineers working with Silicon Carbide (SiC) MOSFETs encounter this firsthand when parallel devices begin exhibiting unexpected oscillations. What starts as a subtle waveform irregularity on an oscilloscope trace can quickly reveal deeper design sensitivities in high-speed switching environments.
Parallel-connected SiC MOSFE
There are certain things you come across and think, why didn’t anyone think of that before? Wind turbine manufacturers have long had problems finding land suitable to build on and then going through all of the red tape necessary to get the permissions needed to build on that land. Another factor to consider is
