David Storm, a research physicist, and Tyler Growden, a National Research Council postdoctoral researcher, at the U.S. Naval Research Laboratory with their molecular beam epitaxy system that develops gallium nitride-based (GaN) semiconductors in Washington, D.C., March 10, 2020. Storm and Growden published their research on GaN semiconductor materials, which showed high yield and performance well suited for high frequency and high power electronic devices in Applied Physics Letters.
A schematic diagram of a prototype microwave air plasma thruster and the images of the bright plasma jet at different microwave powers. This device consists of a microwave power supply, an air compressor, a compressed microwave waveguide and a flame ignitor.
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Figure 1. 12 V, 8 A application using LT8645S at 400 kHz
Figure 1: Replacing a SJ with a SiC MOSFET, switching loss decreases significantly
