Powering Embedded Systems

February 2024

Geoff Breed, Vice President Marketing TTI, Inc. – Europe

TTI Europe Acquires Specialist Transportation Cable Assembly Manufacturer and Interconnect Distributor Raffenday Limited

TTI, Inc. – Europe, a leading specialty distributor of Interconnect, Passive, Electromechanical, Sensor, Discrete and Powercomponents, announces the acquisition of Raffenday Ltd. With production and a distribution center in the UK plus facilities in Slovakia, Raffenday’s high-quality, technical

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Date:

02/21/2024

ROHM has developed 100V breakdown Schottky barrier diodes (SBDs) that deliver industry-leading reverse recovery time (trr).

SBDs Achieve Class-Leading Reverse Recovery Time

The SBDs are intended for applications including power supply and protection circuits in automotive, industrial, and consumer applications. Although numerous types of diodes exist, highly efficient SBDs are increasingly being used inside a variety of applications. Particularly SBDs with a trench

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Date:

02/18/2024

EPC GaN FETs leverage drivers and controllers by Analog Devices to simplify GaN design, increase efficiency, reduce cooling cost.

GaN FETs Deliver Power Density and Efficiency

EPC announces the availability of several reference designs that feature EPC GaN FETs and Analog Devices, Inc. (ADI) controllers. The newly released EPC9195 synchronous buck converter reference design board, operating at 750 kHz switching frequency, converts an input voltage of 36 V - 48 V to a regu

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Date:

02/18/2024

Farnell Adds Murata’s Latest DC-DC Converters

Murata Power Solutions is known worldwide as the leading manufacturer of DC-DC converters as well as compact, high-efficiency power products designed to address power application requirements of all sizes. The new products added to the range carried by Farnell include the MGN1 series of DC-DC conv

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Date:

02/18/2024

Samtec 0.635 mm pitch, Slim Body Edge Rate Connectors

0.635 mm pitch, Slim Body Edge Rate Connectors

It also includes a lower-profile 5 mm mated height. ERF6 & ERM6 Series Edge Rate connectors support 56 Gbps PAM4 high-speed, rugged mezzanine applications for industrial, embedded vision, instrumentation and monitoring, drones, and robotics. ERF6 & ERM6 have two rows of pins while ma

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Date:

02/18/2024

Hidetoshi Shibata, CEO of Renesas

Renesas Electronics Announces Intent to Acquire Altium

Renesas Electronics Corporation and Altium Limited (“Altium”, ASX: ALU), a global leader in electronics design systems, today announced they have entered into a Scheme Implementation Agreement (“SIA”) for Renesas to acquire Altium by way of a Scheme of Arrangement under Australian law (“Scheme”). Un

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Date:

02/15/2024

Protective caps for binder's 670- and 770-series cable connectors reliably protect the components against any ingress of dust and liquids when unmated.

IP67 – even when unmated

The requirements of protection degree IP67 are thereby met. binder, a leading supplier of industrial circular connectors, is adding protective caps for the cable connectors to its NCC (Not Connected Closed) 670- and 770-series portfolio. Their task is to prevent the ingress of particles and humidity

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Date:

02/12/2024

Alpha and Omega Semiconductor has announced the AONA66916, a 100V MOSFET packaged in a top and bottom side cooling DFN 5 x 6 package.

Innovative Double-Sided Cooling DFN 5x6 Package

Delivering a state-of-the-art package that keeps its semiconductor products cooler, AOS is taking a huge step in enabling engineers to develop more efficient designs in telecommunications and industrial applications that must frequently operate in harsh conditions. Typically, when using

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Date:

02/12/2024

ROHM has added a lineup of compact 600V Super Junction MOSFETs – the R6004END4 / R6003KND4 / R6006KND4 / R6002JND4 / R6003JND4.

SOT-223-3 600V MOSFETs Contribute to Smaller Designs

These devices are ideal for small lighting power supplies, pumps, and motors. In recent years, power supplies for lighting and motors for pumps are required to be smaller as devices become more sophisticated – spurring the demand for compact MOSFETs that are essential for switching operation.

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Date:

02/12/2024

Würth Elektronik extends MagI³C-FISM family

The device is 100% pin-to-pin compatible with the previous MagI³C-FISM. It has improved properties: the efficiency goes up to 84 percent, the ambient temperature range has been increased to 105°C and the isolation voltage is 3 kV (for 60 seconds). Like some of its predecessors, this power module ha

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Date:

02/08/2024

PI introduces InnoSwitch5 offline flyback switcher IC

The single-chip switcher achieves over 95 percent efficiency with a novel secondary-side control scheme which achieves zero-voltage switching (ZVS) without a dedicated and costly additional high voltage switch. The new IC, which features a 750 V or a 900 V PowiGaN™ primary switch, primary-side contr

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Date:

02/08/2024

Click image to enlarge

Figure 1: Doped silicon transistor cross section compared to GaN HEMT

High Voltage GaN Transistors for Speed and Efficiency

Kengo Ohmori, Technical Product Marketing Manager, ROHM Semiconductors USA

The high electron mobility transistor (HEMT) is a relative newcomer in the world of mass-produced power switching devices. Unlike its traditional doped Silicon counterpart, HEMTs are heterojunction devices built using two semiconductor materials with distinct bandgap voltages. First demonstrated in the late 19

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Date:

02/04/2024