Wolfspeed, A Cree Company, and a leading global supplier of GaN-on-SiC high electron mobility transistors (HEMTs) and monolithic microwave integrated circuits (MMICs) with best-in-class reliability, is exhibiting at the 35th annual MILCOM 2016, which will take place November 1 – 3 in Baltimore, Maryland.
Widely recognized as the premier international conference for military communications, MILCOM provides security professionals, communications experts, and decision makers from every branch of the US armed forces, multinational forces, the Department of Defense, and other federal agencies with unique opportunities to share, address, and attempt to solve the command, control, communications, computer, and intelligence challenges they’re currently facing.
Several representatives from Wolfspeed’s RF Foundry — the world’s largest dedicated, commercial wide bandgap production device facility — including Foundry Services Program Manager, Richie Richards, and RF Product Marketing Manager, Ryan Baker, will be onsite at Booth #5052 to engage with attendees and promote the military communications reference design circuit they recently developed for wide bandwidth, low frequency power amplifiers.
“Designed for high performance, wideband communications applications, VHF and UHF amplifiers built using Wolfspeed’s GaN technology are ideal for public safety, tactical, and secure military communications. Other communications applications in which transmitters are challenged to reduce size and weight, or are seeking to improve bandwidth, efficiency, and frequency of operation, will also greatly benefit from our GaN products,” said Jim Milligan, director, RF, Wolfspeed. “These features enable significant savings with regard to operating expenses, and, in the case of handheld radios, can lead to improved battery life. We’re pleased to provide military communications design engineers with a demonstration circuit that allows them to quickly, easily, and accurately evaluate the typical performance our advanced devices can achieve in their designs.”
Featuring two unmatched GaN HEMTs: a 15W CGHV27015S that acts as a driver stage for a 100W CGHV40100F — both of which completed testing to demonstrate compliance with NASA reliability standards for satellite and space systems earlier this year — key features of Wolfspeed’s combined amplifier demonstration circuit for military and tactical communications applications include: wide bandwidth operation spanning 50 MHz – 1,000 MHz, >18 dB small signal gain from the output stage, >30 dB small signal gain from driver and output stages, >50 % drain efficiency, and 100W saturated output power.
“Communications are a crucial component of military readiness and operations, so we also take great pride in providing our customers with the most robust RF GaN process available,” said Richie Richards, foundry services program manager, Wolfspeed. “Wolfspeed’s discrete GaN RF transistors and multi-stage GaN MMICs demonstrate industry-leading reliability and performance, having accrued more than 100 billion total hours of field operation with a best-in-class FIT rate. Wolfspeed also provides world-class design assistance, testing, and support to help customers realize their unique specifications, and has a proven track record of doing that with faster cycle times and higher first-pass design successes than our competitors.”
MILCOM attendees who visit the Wolfspeed booth (#5052) can also scan their badge for a chance to win one of two Phantom 3 drones that will be given away at drawings scheduled for 3:00pm on Tuesday and Wednesday, November 1 and 2. Attendees must be present in order to win.
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