Date
03/07/2013
PDF
Vishay Intertechnology announced its technology lineup for the Applied Power Electronics Conference and Exposition (APEC) 2013, taking place March 17-21 in Long Beach, Calif. In booth 113, Hall A, the company will be highlighting its latest industry-leading power MOSFET, passive component, diode, and power IC technologies for a wide range of applications. Vishay Siliconix® power MOSFET technologies featured at APEC 2013 will include TrenchFET® Gen IV devices with maximum on-resistance down to 1 m? for DC/DC converters; high-performance 80 V to 150 V ThunderFET® power MOSFETs; devices featuring p-channel Gen III technology for industry-low on-resistance; 600 V and 650 V E Series devices for increased efficiency; and the AEC-Q101-qualified SQ Rugged Series. In addition, the company will be demonstrating ThermaSim 3.0, the latest version of its free ThermaSim online thermal simulation tool. Vishay Siliconix power IC products to be highlighted are optimized for a wide range of applications and end products. For notebooks and handheld devices, the company will feature high-efficiency microBUCK® DC/DC regulators with ultra-fast response time, and high-density DrMOS power stages optimized for high-frequency switching will be on display for servers, desktop PCs, and graphics cards. In addition, smart load switches with programmable overcurrent protection will be featured for industrial, telecommunications, and medical equipment. For charging in portable devices and automotive, telecommunications, and industrial power applications, highlighted Vishay power diodes will include ESD protection diodes; TransZorb® and PAR® transient voltage suppressors (TVS); TMBS® Trench MOS barrier Schottky rectifiers in SlimSMA and SMPC packages; and FRED Pt® and HEXFRED® Hyperfast and Ultrafast rectifiers and soft recovery diodes. In addition, IGBT modules and optically isolated IGBT and MOSFET drivers will be on display. Passive components from Vishay will consist of a wide variety of the company's latest capacitors, resistors, and inductors. Featured capacitors will include Vishay ESTA cylindrical capacitors for power electronics; DC-link film devices; aluminum capacitors with ultra-long life; high-voltage ceramic devices; Vishay Sprague wet tantalum high-energy capacitors; and Vishay Vitramon HVArc Guard® devices to prevent surface arc-over in high-voltage applications. Highlights of Vishay's line of resistors will include high-voltage devices; Vishay Dale Power Metal Strip® resistors; wirewound devices for pulsing applications; thin film resistors for precision testing; Vishay Draloric stainless steel crowbar power resistors; cemented wirewound safety resistors with silent fusing behavior; nonlinear resistors for temperature measurement and compensation; Vishay Sfernice thick film power resistors; and much more. Featured inductors will include Vishay Dale power devices with operating temperatures to + 155 °C. In addition, Leo Sheftelevich, Staff Product Applications Engineer at Vishay Siliconix, will be presenting an education seminar on Sunday, March 17. "Understanding MOSFET Parameters: Do We Need Even More Footnotes in the MOSFET Datasheets?" will address multiple misconceptions, widespread in the electronic system design community, with regard to MOSFET parameters and specifications.
