Vishay Intertechnology extended its offering of TrenchFET® Gen III p-channel power MOSFETs with -40 V and -30 V devices offered in the PowerPAK® 1212-8 and PowerPAK 1212-8S packages. Featuring industry-low on-resistance at -10 V and -4.5 V gate drives, the Vishay Siliconix SiS443DN is the first -40 V p-channel Gen III device, while the SiSS27DN is the first -30 V MOSFET in the PowerPAK 1212-8S package. The SiS443DN and SiSS27DN are optimized for 24 V, 19 V, and 12 V load switches, as well as adapter and battery switches in a wide range of applications, including power management in mobile computing, smartphones, and tablets. The devices' industry-low on-resistance allows designers to achieve lower voltage drops in their circuits and promote more efficient use of power and longer battery run times. In applications requiring a higher voltage rating, the -40 V SiS443DN provides maximum on-resistance of 11.7 m? (-10 V) and 16 m? (-4.5 V) in the 3.3 mm by 3.3 mm PowerPAK 1212-8 package. When on-resistance is critical, the SiSS27DN offers extremely low values of 5.6 m? (-10 V) and 9 m? (-4.5 V) in the PowerPAK 1212-8S package with a low 0.75 mm profile. The SiS443DN and SiSS27DN are 100 % Rg- and UIS-tested. The MOSFETs are halogen-free according to the JEDEC JS709A definition and compliant to RoHS Directive 2011/65/EU. Samples and production quantities of the new p-channel MOSFETs are available now, with lead times of 14 to 16 weeks for larger orders. Pricing for U.S. delivery only starts at $0.15 per piece in 100,000-piece quantities. Vishay Intertechnology
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