Available in 30, 40, 80 and 150mΩ versions, these latest SiC FETs represent another step forward in accelerating migration to SiC across applications such as server and telecom power supplies, industrial battery chargers and power supplies, EV on-board chargers and DC-DC converters.
The D2PAK-7L SiC FETs support significantly heightened switching speeds, with a Kelvin source connection improving gate drive return performance, as well as offering industry-leading thermal capabilities. Through the utilization of Ag Sintering, die attachments can be done on conventional PCBs as well as complex insulated metal substrate (IMS) arrangements. In addition, they exhibit excellent creepage and clearance figures of 6.7mm and 6.1mm respectively - meaning the highest degrees of operational safety can be assured even at elevated voltages.
“Through the fast switching capabilities of these latest FETs, alongside the superior thermal performance resulting from Ag sintering, we continue to bring performance, reliability, size and layout benefits to the power designer,” states Anup Bhalla, VP Engineering at UnitedSiC.
The new D2PAK-7L devices are fully supported by UnitedSiC’s FET-Jet CalculatorTM. Utilizing this free online resource, engineers can assess the different operational parameters needed for their application, carry out detailed performance comparisons and then identify which is the best SiC solution for their design requirements quickly and with confidence.
Pricing (1000-up, FOB USA) for the new 650V D2PAK-7L SiC FETs range from $3.27 for the UF3C065080B7S to $7.54 for the UF3SC065030B7S. For the 1200V D2PAK-7L devices, prices range from $3.10 for the UF3C120150B7S to $10.91 for the UF3SC120040B7S. All devices are available from UnitedSiC authorized distributors.
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