U-MOS IX-H series of low-voltage N-channel power MOSFETs
Toshiba Electronics Europe has expanded its U-MOS IX-H series of low-voltage N-channel power MOSFETs with new 40V and 45V products delivering industry leading-class[1] low on-resistance and high-speed performance. The new products - nine 40V and five 45V versions - are designed for industrial and consumer applications, including high-efficiency DC-DC converters, high-efficiency AC-DC converters, power supplies and motor drives.
The new MOSFETs use Toshiba’s latest generation low-voltage trench structure U-MOS IX-H process to combine the industry’s leading-class[1] low on-resistance with low output charges that support efficient high-speed performance. Depending on the device, maximum RDS(ON) (@VGS=10V) ranges from 0.80mΩ to 7.5mΩ.
The new structure lowers the performance index for the RDS(ON) * Qsw[2] figure of merit, improving switching applications to a level surpassing current Toshiba products[3]. Output loss is improved by the reduction of output charge, which can contribute to higher system efficiency. Furthermore, the cell structures used in the new MOSFETs are optimized to suppress spike voltage and ringing during switching, which can contribute to lowering system EMI.
Main Packages are SOP-Advance 5 x 6mm and TSON-Advance 3x3mm. All of the new devices support 4.5V logic-level drives.
Notes
[1] In the category of products with the same ratings, as of December 9, 2016. Toshiba survey.
[2] RDS(ON): Drain-source on-resistance Qsw: Gate switch charge
[3] Toshiba products using the previous generation U-MOS VIII-H process
Low-voltage power MOSFETs
Toshiba Electronics Europe
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