Date
05/17/2016
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SiC Schottky barrier diode
Toshiba Electronics Europe has unveiled Schottky barrier diodes (SBDs) based on the company’s second-generation silicon carbide (SiC) semiconductor technology. These SBDs deliver current densities up to 50% higher than first generation devices and can handle significantly higher forward surge currents.
Use of SiC semiconductors helps designers to improve efficiency, reduce heat dissipation and save space in high-speed power switching designs. SiC power devices also offer stable operation over a wider temperature range than silicon alternatives – even at high voltages and currents.
With its second generation SiC process, Toshiba has been able to reduce die thickness to develop SBDs with current densities around one and a half times (1.5x) higher than first generation devices. In addition, the second generation SiC SBDs will offer higher non-repetitive forward surge current (IFSM) ratings.
The first products in the second-generation line-up will be 650V devices with current ratings of 4A (TRS4E65F), 6A (TRS6E65F), 8A (TRS8E65F), and 10A (TRS10E65F) in TO-220 2-pin and TO-220 isolated 2-pin packages named TRS..A65F. These diodes will be ideal for high-speed switching power conversion designs including power factor correction (PFC) schemes, photovoltaic inverters and uninterruptible power supplies (UPS). Toshiba’s SiC SBDs can also be used to improve the efficiency of switching power supplies through the replacement of conventional silicon diodes.
