Both devices are suited to a wide range of power applications where low-loss operation is important, including highly efficient AC-DC and DC-DC conversion in data centres and communication base stations as well as a broad range of motor drive equipment.
Both the TPH2R408QM and TPN19008QM are 80V U-MOSX-H products that exhibit a reduction of around 40% in drain-source on-resistance (RDS(ON)) compared to corresponding 80V products in earlier processes such as U-MOSVIII-H. As a result, the TPN19008QM has an RDS(ON) value of 19mΩ (max.) while the TPH2R408QM value is just 2.43mΩ.
Optimising the device structure has improved the trade-off between RDS(ON) and gate charge characteristics by up to 15% and the trade-off between RDS(ON) and output charge by 31%. Combining this with the improvements in RDS(ON) means that the new devices feature the lowest power dissipation in the industry.Both devices are housed in surface mount packages and rated for a drain-source voltage (VDSS) of 80V. They can operate at channel temperatures (Tch) as high as 175ºC. The TPN19008QM is rated for a drain current (ID) of 34A and is housed in a 3.3mm x 3.3mm TSON advance package while the TPH2R408QM is rated for an ID of 120A and housed in a 5.0mm x 6.0mm SOP advance package.
Progressive shipping of the new devices starts today.
https://toshiba.semicon-storage.com/eu/product/mosfet/lv-mosfet.html
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