Designed specifically for modern 48 V system applications, the devices are suited to use in boost converters for integrated starter generators (ISG) and LED headlights as well as motor drives, switching regulators and load switches.
The XPH4R10ANB and XPH6R30ANB devices improve the efficiency of automotive systems due to their low on-resistance (RDS(ON)). In fact, the XPH4R10ANB offers an industry-leading on resistance of just 4.1 mΩ, significantly reducing system losses. Both devices are housed in the SOP Advance(WF) package that features wettable flanks. This small package was proven in 48 V automotive applications and allows the use of automated optical inspection (AOI) to ensure the quality of solder joints.
Both devices are part of Toshiba’s U-MOSVIII-H series and offer a drain-source voltage (VDSS) of 100 V and max operating temperature of 175ºC. The XPH4R10ANB supports a maximum continuous drain current of 70 A and 210 A when pulsed. The figures for the XPH6R30ANB are 45 A and 135 A respectively.
Both devices are now in mass production and are shipping in production quantities.
https://toshiba.semicon-storage.com/eu/product/mosfet/detail.XPH4R10ANB.html
https://toshiba.semicon-storage.com/eu/product/mosfet/detail.XPH6R30ANB.html
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