Well-suited for use in high-power switchmode power supply, motor drive, UPS, solar inverter, oil exploration, and other high-power, high-voltage applications, a family of industrial temperature, silicon carbide (SiC) standard power modules are offered with extended temperature ranges to meet next-generation power conversion system requirements for higher power densities, operating frequencies and efficiencies. SiC technology delivers higher breakdown field strength and improved thermal conductivity compared to silicon material. This enables improved performance characteristics in parameters including zero reverse recovery, temperature independent behavior, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability. "We applied our extensive expertise in power semiconductor integration and packaging to deliver a next-generation family of silicon carbide power modules that deliver outstanding levels of performance, reliability and overall quality," says Philippe Dupin, general manager of Microsemi's Power Module Products group. "Our new modules also allow designers to shrink system size and weight, while reducing total systems costs." Microsemi's new industrial temperature SiC power modules feature multiple circuit topologies and are integrated into low profile packages. The majority of the new module product family uses aluminum nitride (AIN) substrates to enable isolation from the heat sink, which improves heat transfer to the cooling system. Additional features include high speed switching, low switching losses, low input capacitance, low drive requirements, low profile and minimum parasitic inductance which enable high frequency, high performance, high density and energy-saving power systems. Microsemi's SiC product portfolio includes Schottky diodes in both discrete and module packages, and power modules with a mix of SiC Schottky diodes and IGBT or MOSFET transistors in both standard and custom configurations. Microsemi
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