Date
03/13/2013
PDF
Richardson RFPD announced they will feature a selection of Silicon Carbide (SiC) discrete devices and modules, including Schottky diodes and MOSFETS, as well as SiC and hybrid modules from industry-leading manufacturers Cree, Microsemi, Powerex and Vincotech, at the 2013 Applied Power Electronics Conference and Exposition (APEC). Silicon carbide offers significant advantages in high power, high voltage applications where power density, higher performance and reliability are of the utmost importance. Industrial applications like solar inverters, welding, plasma cutters, fast vehicle chargers, and oil exploration are a few examples that benefit from the higher breakdown field strength and improved thermal conductivity that SiC offers over silicon material (Si).
