Power Integrations Launches 1700 V GaN Switcher IC, Setting New Benchmark for Gallium Nitride Technology

­Power Integrations, the leader in high-voltage integrated circuits for energy-efficient power conversion, today introduced a new member of its InnoMux™-2 family of single-stage, independently regulated multi-output offline power supply ICs. The new device features the industry’s first 1700 V gallium nitride switch, fabricated using the company’s proprietary PowiGaN™ technology. The 1700 V rating further advances the state-of-the-art for GaN power devices, previously set by Power Integrations’ own 900 V and 1250 V devices, both launched in 2023. The 1700 V InnoMux-2 IC easily supports 1000 VDC nominal input voltage in a flyback configuration and achieves over 90 percent efficiency in applications requiring one, two or three supply voltages. Each output is regulated within one percent accuracy, eliminating post regulators and further improving system efficiency by approximately ten percent. The new device replaces expensive silicon carbide (SiC) transistors in power supply applications such as automotive chargers, solar inverters, three-phase meters and a wide variety of industrial power systems. 

Radu Barsan, vice president of technology at Power Integrations, said, “Our rapid pace of GaN development has delivered three world-first voltage ratings in a span of less than two years: 900 V, 1250 V and now 1700 V. Our new InnoMux-2 ICs combine 1700 V GaN and three other recent innovations: independent, accurate, multi-output regulation; FluxLink™, our secondary-side regulation (SSR) digital isolation communications technology; and zero voltage switching (ZVS) without an active-clamp, which all but eliminates switching losses.”

“1700 V rating is substantially higher than any other commercially available GaN HEMT that we are aware of,” said Ezgi Dogmus, activity manager, compound semiconductors at Yole Group. “The Power GaN device market is poised to reach $2 billion by decade's end, expanding across various application spaces with potentially attractive cost advantages over SiC.”

For more information, go here.