SUNNYVALE, Calif. – Alpha and Omega Semiconductor Limited (AOS) introduced AONR21357, the initial product in this P-Channel family. The new AONR21357 uses the improved P-Channel MOSFET process to achieve low power loss and reliable startup. The new device rated at -30V drain-source breakdown voltage (BVDss) and -25V gate-source voltage. It features a maximum on-resistance (RDS(ON)) of 12.3mohm under VGS = -4.5V, and a thermally enhanced 3x3mm DFN package. The new P-Channel MOSFET is ideal for load switch applications in Notebook Adapter-In/ Battery In sockets.
USB Type-C is becoming the de-facto interface for the latest PCs and mobile designs. With that, the USB-PD standard is implemented to cover various power delivery requirements for many portable devices. The load switch circuit is used to switch on/off the power bus according to the power management proxy. The new MOSFET used as the load switch offers extended input/output voltage range, and is robust and reliable enough to accommodate the possible working conditions. AOS’enhanced P-Channel technology offers robustness toward linear mode operation, and low Miller’s Plateau (<3.5V) to cover the possible USB-PD voltages.
Technical Highlights
The new product family offers various RDS(ON) levels in combination with multiple package options.
|
Part Number |
Package |
VDS (V) |
VGS (±V) |
RDS(ON) (mΩ max)* at VGS = |
Available |
|
|
10V |
4.5V |
|||||
|
DFN3x3 |
-30 |
25 |
7.8 |
12.3 |
Now |
|
|
AONR21307 |
DFN3x3 |
-30 |
25 |
12 |
20 |
Q4-2017 |
|
AONR21321 |
DFN3x3 |
-30 |
25 |
18 |
26 |
Q1-2018 |
|
DFN5x6 |
-30 |
25 |
7.8 |
12.3 |
Now |
|
|
SO-8 |
-30 |
25 |
8.5 |
13 |
Now |
|
|
AONS21307 |
DFN5x6 |
-30 |
25 |
12 |
20 |
Q4-2017 |
Pricing and Availability
The AONR21357 is immediately available in production quantities with a lead-time of 12 weeks. The unit price of 1,000 pieces is $0.60.
For more information, please visit www.aosmd.com.
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