New Technology Enables 1200 V SiC MOSFET in Various Packages

The new M1H chip has been designed to provide flexibility and is intended for use in applications, such as inverters in solar energy systems, which have to meet peak demand. The chip is also ideal for use in fast EV charging, energy storage systems and other industrial applications.

Advancements in the CoolSiC base technology allow a larger gate operation window that improves the on-resistance for the given die size. Previous generation chips had a recommendation to use certain operating areas for the gate voltage with DC as a turn off voltage depending on the switching frequency. The M1H technology offers the full window of gate voltages, even down to minus 10 volt at highest switching frequencies. The larger gate operation window provides a high level of robustness against driver- and layout-related voltage peaks at the gate, with no restrictions at higher switching frequencies.

M1H technology will be integrated into the existing Easy family to improve the performance of Easy 1B and 2B modules. The new 1200 V CoolSiC MOSFET will be an Easy 3B module. M1H chips allow the on-resistance of the modules to be significantly improved, making the devices more reliable and efficient. A maximum temporary junction temperature of 175°C increases the overload capability, enabling higher power density and coverage of failure events. Compared to its predecessor, M1 technology, M1H has adapted the internal R G, enabling the switching behaviour to be easily optimized. Dynamic behaviour is maintained with the M1H chip.

In addition to the Easy module family form factors, the CoolSiC MOSFET 1200 V M1H portfolio has new 7 mΩ, 14 mΩ and 20 mΩ ultra-low on-resistances in TO247-3 and TO247-4 discrete packages. The new devices are easy to design-in thanks to the gate voltage overshoots and undershoots with the new maximum gate-source voltage down to -10 V, and come with avalanche and short-circuit capability specifications.

Infineon’s .XT interconnection technology, previously introduced in the D 2PAK-7L package, is now also implemented in a TO-footprint. Thermal dissipation capabilities are enhanced by more than 30 percent over a standard interconnection. That thermal benefit can be used to increase the output power by up to 15 percent. Alternatively it can be used to increase the switching frequency to further reduce the number of passive components required, providing enhanced power density and reduced system cost. Without changing the system operating conditions, the .XT technology will lower the SiC MOSFET junction temperature, therefore significantly increasing the system lifetime and power cycling capabilities.

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