Magnachip Unveils Its First 8th-Generation MXT LV MOSFET Designed with Super-Short Channel FET II

­Magnachip Semiconductor Corporation announced the release of its 8th-generation 1) MXT LV MOSFET (Metal Oxide Semiconductor Field Effect Transistor) for smartphone battery protection circuits. 

Magnachip has introduced its proprietary Super-Short Channel FET II (SSCFET® II) technology for the first time in the Company’s new 12V Dual N-channel MOSFET (MDWC12D024PERH). SSCFET® II is Magnachip's latest design technology that significantly reduces the channel length, thereby lowering the 2)RSS(on).

Compared to the previous generation product of the same size, the RSS(on) of this product is reduced by approximately 22%. This reduction decreases power loss, shortens smartphone charging times, and lowers the internal temperature of smartphones by about 12% in fast charging mode.

With global smartphone manufacturers enhancing AI capabilities in smartphones, the importance of MOSFET products is growing. Magnachip's new 12V MXT LV MOSFET features high power efficiency and is optimized for a wide range of battery protection applications in premium smartphones, particularly on-device AI smartphones.

According to market research firm Omdia, shipments of on-device AI smartphones are expected to grow at an average annual rate of 50% from 2024 to 2028, reaching 606 million units in 2028.

"Following the development of Super-Short Channel FET I technology and the successful product rollout early last year, Magnachip has now introduced an upgraded Super-Short Channel FET II technology,” said YJ Kim, CEO of Magnachip. “We plan to continue developing innovative high-density cell trench technology and launch advanced power solutions targeting smartphones, smartwatches and earphones throughout the second half of this year."

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