Date
03/27/2024
PDF
Infineon has launched OptiMOS™ 7 80 V, a new advanced power MOSFET technology with increased power density, available in a versatile SSO8 5 x 6 mm² SMD package, ideal for 48 V board net applications in demanding automotive systems like EVs, electric power steering, and battery switches.
Infineon Technologies AG has introduced the first product in its new advanced power MOSFET technology OptiMOS™ 7 80 V: The IAUCN08S7N013 features a significantly increased power density and is available in the versatile, robust, and high-current SSO8 5 x 6 mm² SMD package. The OptiMOS™ 7 80 V offering is a perfect match for the upcoming 48 V board net applications. It is designed specifically for the high performance, high quality and robustness needed for demanding automotive applications like automotive DC-DC converters in EVs, 48 V motor control, for instance electric power steering (EPS), 48 V battery switches and electric two- and three-wheelers.
Compared to the previous generation, the R DS(on) of the Infineon IAUCN08S7N013 has been reduced by more than 50 percent, and is now the best R DS(on) in the industry with a maximum of 1.3 mΩ. Users benefit from minimized conduction losses, superior switching performance and the highest power density in a 5 x 6 mm² package. In addition, the IAUCN08S7N013 also features low package resistance and inductance, as well as a high avalanche current capability. For automotive applications, it has an extended qualification that goes beyond AEC-Q101.
Availability
The IAUCN08S7N013 is in mass-production and available now. More information is available here.
