The EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch
Efficient Power Conversion (EPC) announced the introduction of an eGaN FET designed with a wider pitch connection layout. The first in a new family of “Relaxed Pitch” devices, the EPC2029 80 V, 31 A eGaN FET features a 1 mm ball pitch. The wider pitch allows for placement of additional and larger vias under the device to enable high current carrying capability despite the extremely small 2.6 mm x 4.6 mm footprint.
Compared to a state-of-the-art silicon power MOSFET with similar on-resistance, the EPC2029 is much smaller and has many times superior switching performance. The EPC2029 is ideal for applications such as high frequency DC-DC converters, synchronous rectification in DC/DC and AC/DC converters, motor drives, and class-D audio.
Development board
To simplify the evaluation process of this latest high performance eGaN FET, the EPC9046 development board is available to support easy “in circuit” performance evaluation of the EPC2029.
The board is a half-bridge topology with onboard gate drives, featuring the EPC2029 eGaN power transistor. The board is 2” x 2” and contain two eGaN FETs using the Texas Instruments LM5113 gate driver, supply and bypass capacitors. It contains all critical components and is laid out for optimal switching performance with additional area to add buck output filter components. There are also various probe points to facilitate simple waveform measurement and efficiency calculation.
Price and availability
Pricing for the EPC2029 power transistors at 1K units is $6.03 each and pricing for the EPC9046 development board is $137.75.
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