Cree, a leading supplier of silicon carbide (SiC) based power products, will introduce its new 900V SiC MOSFETs at PCIM 2015 in Nuremberg, Germany, which takes place May 19 to 21. At the show, Europe's leading meeting-point for specialists in power electronics and its applications in intelligent motion, renewable energy and energy management, Cree will showcase its vast portfolio of SiC diodes, MOSFETs, module and bare die chips at the booth of its distribution partner MeV (hall 9, stand 242). In addition, Cree experts will explain how the SiC technology enables smaller and more heat resistant power supplies with higher switching frequencies that are more efficient and cheaper than applications with regular technologies.
Demonstrations will include:
-a 220W SiC-based LED power supply,
-a power stack that demonstrates how Cree’s 1.2kV, 300A SiC modules can revitalize older IGBT-module-based systems,
-an extremely lightweight (<33kg), high power density 50kW solar inverter based on the latest Cree SiC modules, one-fifth the size and weight of equivalent, industry-standard silicon-based inverters.
Speaking Engagements:
“Cree Power Technology and the Impact on PV Inverter Designs” (Marcelo Schupbach, Cree)
PCIM Vendor Session (Exhibitors Forum, hall 7, stand 260)
Tuesday, May 19, 1:40 - 2:00 pm
“High Density and High Power Single-Stage LED Driver with 1200V Silicon Carbide MOSFET” (Jimmy Lui, Cree)
PCIM Poster Session (Foyer Entry Ground Floor NCC Mitte)
Tuesday, May 19, 3:30 pm
“SiC Impact on Chargers and Inverters” (Paul Kierstead, Cree, 15 minutes)
Yolè Event (Industry Forum, hall 6, stand 345)
Wednesday, May 20, 10:00 - 11:00 am
“New developments in SiC MOSFETs from 900V to 10kV” (Jeffrey Casady, Cree)
Bodo’s Power System Forum (hall 6, stand 345)
Wednesday, May 20, 11:00 - 12:00 pm
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