Presented as having the industry's lowest on-resistance for a device of its type, a family of 8V and 20V n-channel and p-channel TrenchFET® power MOSFETs from Vishay Intertechnology is available in 1 mm by 1 mm by 0.55 mm and 1.6 mm by 1.6 mm by 0.6 mm CSP MICRO FOOT® packages. The devices are intended for battery- or load-switching in power management applications for portable electronics such as smartphones, tablet PCs, and mobile computing devices. The MOSFETs' compact outlines save PCB space and provide ultra-thin profiles to enable slimmer and lighter portable electronics, while their low on-resistance translates into lower conduction losses for reduced power consumption and longer battery life between charges. The devices' low on-resistance also means a lower voltage drop across the load switch to prevent unwanted under-voltage lockout. For applications where low on-resistance is more critical than space, the 8 V n-channel Si8424CDB and - 20 V p-channel Si8425DB offer maximum on-resistance of 20 m? and 23 m?, respectively, at a 4.5 V gate drive. The devices are offered in the 1.6 mm by 1.6 mm by 0.6 mm CSP package. With 43 m? maximum on-resistance at 4.5 V, the smaller 1 mm by 1 mm by 0.55 mm Si8466EDB 8 V n-channel MOSFET will be used for applications where space is even more critical than on-resistance. The Si8466EDB also provides 3000 V typical ESD protection. The Si8466EDB and Si8424CDB offer on-resistance ratings down to 1.2 V, allowing the devices to work with the lower-voltage gate drives and lower bus voltages common in handheld devices, saving the space and cost of level-shifting circuitry. All devices released today are compliant to RoHS Directive 2011/65/EU and halogen-free according to the JEDEC JS709A definition. The Si8466EDB, Si8424CDB, and Si8425DB are the latest expansion to the MICRO FOOT family, and are available now with lead times of 12 to 14 weeks for larger orders. Pricing for U.S. delivery starts at $0.15 per piece in 100,000-piece quantities. Vishay MICRO FOOT
PDF
