100 V and 200 V Rad-Hard GaN Power Devices Increase Power Density for Demanding Space Applications

­EPC Space announces the introduction of two new rad-hard GaN transistors with ultra-low on-resistance and extremely low gate charge for high power density solutions that are lower cost and more efficient than the nearest comparable radiation-hardened silicon MOSFET. These devices come packaged in hermetic packages in very small footprints. 

With higher breakdown strength, lower gate charge, lower switching losses, better thermal conductivity, and lower on-resistance, power devices based on GaN significantly outperform silicon-based devices and enable higher switching frequencies resulting in higher power densities, higher efficiencies, and more compact and lighter weight circuitry for critical spaceborne missions.

Applications benefiting from the performance of these products include DC-DC power supplies for satellites and space mission equipment, motor drives for robotics, instrumentation and reaction wheels, deep space probes, and ion thrusters.

For more information, go here.